Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films
نویسندگان
چکیده
منابع مشابه
Dynamics of step bunching in heteroepitaxial growth on vicinal substrates.
When a heteroepitaxial film is grown on a vicinal substrate, the terrace steps at the growth front may bunch together to relieve strain, resulting in a rough surface. On the other hand, proper manipulation of the growth kinetics may suppress the inherent bunching instability, thus preserving step-flow growth. Here we show that the step dynamics in the early stages of growth can already determin...
متن کاملUnification of step bunching phenomena on vicinal surfaces
Pak-Wing Fok,1 Rodolfo R. Rosales,2 and Dionisios Margetis3 1Applied and Computational Mathematics, California Institute of Technology, Pasadena, California 91125, USA 2Department of Mathematics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 3Department of Mathematics and Institute for Physical Science and Technology, University of Maryland, College Park, Maryland 2...
متن کاملNew mechanism for impurity-induced step bunching
– Codeposition of impurities during the growth of a vicinal surface leads to an impurity concentration gradient on the terraces, which induces corresponding gradients in the mobility and the chemical potential of the adatoms. Here it is shown that the two types of gradients have opposing effects on the stability of the surface: Step bunching can be caused by impurities which either lower the ad...
متن کاملPersistent step-flow growth of strained films on vicinal substrates.
We propose a model of persistent step flow, emphasizing dominant kinetic processes and strain effects. Within this model, we construct a morphological phase diagram, delineating a regime of step flow from regimes of step bunching and island formation. In particular, we predict the existence of concurrent step bunching and island formation, a new growth mode that competes with step flow for phas...
متن کاملQuantitative theory of current-induced step bunching on Si„111..
We use a one-dimensional step model to study quantitatively the growth of step bunches on Si~111! surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 °C under the assumption that there is local mass transport through surface diffusion and that step motion is limited by the attachment rate of adatoms to step edges. The direct he...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3535981